PECULIARITIES OF EPITAXIAL DIFFUSION CoSi2 FILMS GROWN ON THE SURFACE OF FLUORITE
Abstract
The paper presents the results of analysis of epitaxial film CoSi2/Si/CaF2(100), grown by the method of molecular-beam epitaxy. It has been proven that under certain thermal treatment conditions so-called epitaxial silicides are formed on the crystal structure, which can play the role of conductive layers or metal coatings. The obtained data allow to draw conclusions about the film morphology and diffusion character in the CoSi2 layer.
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